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Beilstein J. Nanotechnol. 2018, 9, 2794–2801, doi:10.3762/bjnano.9.261
Figure 1: a) Photoluminescence spectra of samples with vertically stacked InAs QD arrays; b) full width at ha...
Figure 2: a) Photoluminescence spectra of the InAs/GaAs heterostructures with different thicknesses of the Ga...
Figure 3: a) XRD spectra of GaAs1−xBix films grown on GaAs(100) substrates; b) Raman spectra of InAs/GaAs and...
Figure 4: a) Photoluminescence spectra of InAs/GaAs heterostructures with different Bi content; b) Atomic for...
Figure 5: Energy band diagram of heterostructures: a) InAs/GaAs; b) InAs/GaAs1−xBix.
Beilstein J. Nanotechnol. 2017, 8, 12–20, doi:10.3762/bjnano.8.2
Figure 1: Energy dependence and angular dependence of sputtering coefficients.
Figure 2: The calibration of the SnTe depositon rate as a function of the evaporator temperature.
Figure 3: Size distribution of InAs quantum dots as a function of the substrate temperature.
Figure 4: The dependence of average dimensions and surface density of InAs nanoislands on the ion current val...
Figure 5: Average dimensions and surface density of InAs nanoislands as a function of the ion energy.
Figure 6: Raman scattering spectra of samples obtained at different ion energies.
Figure 7: Doping profiles measured by C–V profiling.
Figure 8: Photoluminescence spectra of the grown InAs/GaAs structures with different levels of doping of the ...
Figure 9: Dark I–V characteristics of the different doped samples.